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| ? 2011-2015 microchip technology inc. ds20005004d-page 1 mcp16301/h features ? up to 96% typical efficiency ? input voltage range: - 4.0v to 30v ( mcp16301 ) - 4.7v to 36v ( mcp16301h ) ? output voltage range: 2.0v to 15v ? 2% output voltage accuracy ? qualification: aec-q100 rev g, grade 1 (-40c to +125c) ? integrated n-channel buck switch: 460 m ? ? minimum 600 ma output current over all input voltage range (see figure 2-6 for maximum output current vs. v in ): - up to 1a output current at 3.3v, 5v and 12v v out , sot-23 package at +25c ambient temperature ? 500 khz fixed frequency ? adjustable output voltage ? low device shutdown current ? peak current mode control ? internal compensation ? stable with ceramic capacitors ? internal soft-start ? cycle-by-cycle peak current limit ? undervoltage lockout (uvlo): 3.5v ? overtemperature protection ? available package: sot-23-6 applications ?pic ? microcontroller and dspic ? digital signal controller bias supply ? 24v industrial input dc-dc conversion ? set-top boxes ? dsl cable modems ? automotive ? wall cube regulation ? sla battery-powered devices ? ac-dc digital control power source ? power meters ?d 2 package linear regulator replacement -see figure 5-2 ?consumer ? medical and health care ? distributed power supplies general description the mcp16301/h devices are highly integrated, high-efficiency, fixed-frequency, step-down dc-dc converters in a popular 6-pin sot-23 package that operates from input voltage sources up to 36v. integrated features include a high-side switch, fixed-frequency peak current mode control, internal compensation, peak current limit and overtemperature protection. minimal external components are necessary to develop a complete step-down dc-dc converter power supply. high converter efficiency is achieved by integrating the current-limited, low-resistance, high-speed n-channel mosfet and associated drive circuitry. high switching frequency minimizes the size of external filtering components, resulting in a small solution size. the mcp16301/h devices can supply 600 ma of continuous current while regulating the output voltage from 2.0v to 15v. an integrated, high-performance peak current mode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions that are common in power systems. the en input is used to turn the device on and off. while turned off, only a few micro amps of current are consumed from the input for power shedding and load distribution applications. output voltage is set with an external resistor divider. the mcp16301/h devices are offered in a space-saving sot-23-6 surface mount package. package type mcp16301/h 6-lead sot-23 1 2 3 4 5 6 sw v in en boost gnd v fb high-voltage input integrated switch step-down regulator
mcp16301/h ds20005004d-page 2 ? 2011-2015 microchip technology inc. typical applications v in gnd v fb sw v in 6.0v to 36v v out 5.0v @ 600 ma c out 2x10f c in 10 f l 1 22 h boost 52.3 k ? 10 k ? en 1n4148 40v schottky diode c boost 100 nf v in gnd v fb sw v in 4.7v to 36v v out 3.3v @ 600 ma c out 2x10f c in 10 f l 1 15 h boost 31.6 k ? 10 k ? en 1n4148 40v schottky diode c boost 100 nf 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 i out (ma) efficiency (%) v out = 5.0v v out = 3.3v v in = 12v ? 2011-2015 microchip technology inc. ds20005004d-page 3 mcp16301/h 1.0 electrical characteristics absolute maximum ratings ? v in, sw ............................................................... -0.5v to 40v boost ? gnd ................................................... -0.5v to 46v boost ? sw voltage........................................ -0.5v to 6.0v v fb voltage ........................................................ -0.5v to 6.0v en voltage ............................................. -0.5v to (v in +0.3v) output short-circuit current ................................. continuous power dissipation ....................................... internally limited storage temperature ................................... -65 c to +150 c ambient temperature with power applied ... -40 c to +125 c operating junction temperature.................. -40 c to +150 c esd protection on all pins: hbm ................................................................. 3 kv mm ..................................................................200v ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical characteristics: unless otherwise indicated, t a = +25c, v in =v en =12v, v boost ?v sw =3.3v, v out =3.3v, i out = 100 ma, l = 15 h, c out =c in = 2 x 10 f x7r ceramic capacitors. boldface specifications apply over the t a range of -40 o c to +125 o c. parameters sym. min. typ. max. units conditions input voltage v in 4 ? 30 v note 1 (mcp16301) 4.7 ? 36 v note 1 (mcp16301h) feedback voltage v fb 0.784 0.800 0.816 v output voltage adjust range v out 2.0 ? 15.0 v note 2 feedback voltage line regulation ?? v fb /v fb )/ ? v in ?0.01 0.1 %/v v in = 12v to 30v feedback input bias current i fb -250 10 +250 na undervoltage lockout start uvlo start ?3.5 4.0 vv in rising (mcp16301) ?3.5 4.7 vv in rising (mcp16301h) undervoltage lockout stop uvlo stop 2.4 3.0 ? v v in falling undervoltage lockout hysteresis uvlo hys ?0.5 ?v switching frequency f sw 425 500 550 khz i out = 200 ma maximum duty cycle dc max 90 95 ? % v in =5v; v fb =0.7v; i out = 100 ma minimum duty cycle dc min ?1 ?% nmos switch on resistance r ds(on) ?0.46 ? ? v boost ?v sw =3.3v nmos switch current limit i n(max) ?1.3 ?av boost ?v sw =3.3v quiescent current i q ?2 7.5 ma v boost =3.3v; note 3 quiescent current - shutdown i q ?7 10 a v out =en=0v maximum output current i out 600 ??ma note 1 en input logic high v ih 1.4 ??v en input logic low v il ?? 0.4 v en input leakage current i enlk ?0.05 1.0 a v en = 12v note 1: the input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. see characterization graphs for typical input to output operating voltage range and uvlo start and uvlo stop limits. 2: for v in mcp16301/h ds20005004d-page 6 ? 2011-2015 microchip technology inc. note: unless otherwise indicated, v in =en=12v, c out =c in =2x10f, l=15h, v out =3.3v, i load =200ma, t a =+25c . figure 2-7: input quiescent current vs. temperature. figure 2-8: switching frequency vs. temperature; v out =3.3v. figure 2-9: maximum duty cycle vs. ambient temperature; v out =5.0v. figure 2-10: peak current limit vs. temperature; v out =3.3v. figure 2-11: switch r dson vs. v boost. figure 2-12: v fb vs. temperature; v out =3.3v. 0 1 2 3 4 5 -40 -25 -10 5 20 35 50 65 80 95 110 125 i q (ma) ambient temperature (c) v out = 3.3v i out = 0 ma v in = 12v v in = 6v v in = 30v 455 460 465 470 475 480 485 490 495 500 505 -40 -20 0 20 40 60 80 100 120 switching frequency (khz) ambient temperature (c) v in = 12v v out = 3.3v i out = 200 ma 94.7 94.8 94.9 95 95.1 95.2 95.3 95.4 95.5 -40 -25 -10 5 20 35 50 65 80 95 110 125 maximum duty cycle (%) ambient temperature (c) v in = 5v i out = 200 ma 600 800 1000 1200 1400 1600 1800 -40 -25 -10 5 20 35 50 65 80 95 110 125 peak current limit (ma) ambient temperature (c) v in = 12v v in = 30v v in = 6v v out = 3.3v 420 430 440 450 460 470 480 490 500 510 33.544.55 rdson (m : ) boost voltage (v) t a = 25c v ds = 100 mv 0.796 0.797 0.798 0.799 0.800 0.801 0.802 -40 -20 0 20 40 60 80 100 120 v fb voltage (v) ambient temperature (c) v in = 12v v out = 3.3v i out = 100 ma ? 2011-2015 microchip technology inc. ds20005004d-page 7 mcp16301/h note: unless otherwise indicated, v in =en=12v, c out =c in =2x10f, l=15h, v out =3.3v, i load =200ma, t a =+25c . figure 2-13: undervoltage lockout vs. temperature. figure 2-14: en threshold voltage vs. temperature. figure 2-15: light load switching waveforms. figure 2-16: heavy load switching waveforms. figure 2-17: typical minimum input voltage vs. output current. figure 2-18: start-up from enable. 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 -40 -25 -10 5 20 35 50 65 80 95 110 125 voltage (v) ambient temperature (c) uvlo start uvlo stop 0.40 0.45 0.50 0.55 0.60 0.65 0.70 -40 -25 -10 5 20 35 50 65 80 95 110 125 enable threshold voltage (v) ambient temperature (c) v in = 12v v out = 3.3v i out = 100 ma v out = 3.3v i out = 50 ma v in = 12v v out 20 mv/div ac coupled v sw 5v/div i l 100 ma/div 1s/div v out = 3.3v i out = 600 ma v in = 12v 1s/div v out = 20 mv/div ac coupled v sw = 5v/div i l = 20 ma/div 3.20 3.50 3.80 4.10 4.40 4.70 5.00 1 10 100 1000 minimum input voltage (v) i out (ma) to start to run v out = 3.3v i out = 100 ma v in = 12v v out 2v/div 100 s/ v out 2v/div 100 s/div v en 2v/div mcp16301/h ds20005004d-page 8 ? 2011-2015 microchip technology inc. note: unless otherwise indicated, v in =en=12v, c out =c in =2x10f, l=15h, v out =3.3v, i load =200ma, t a =+25c . figure 2-19: start-up from v in. figure 2-20: load transient response. figure 2-21: line transient response. v out = 3.3v i out = 100 ma v in = 12v v out 1v/div v in 5v/div 100 s/div v out = 3.3v i out = 100 ma to 600 ma v out ac coupled 100 mv/div i out 200 ma/div 100 s/div v out = 3.3v i out = 100 ma v in = 8v to 12v step v out ac coupled 100 mv/div v in 2v/div 10 s/div ? 2011-2015 microchip technology inc. ds20005004d-page 9 mcp16301/h 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . 3.1 boost pin (boost) the high side of the floating supply used to turn the integrated n-channel mosfet on and off is connected to the boost pin. 3.2 ground pin (gnd) the ground or return pin is used for circuit ground connection. the length of the trace from the input cap return, output cap return and gnd pin should be made as short as possible to minimize the noise on the gnd pin. 3.3 feedback voltage pin (v fb ) the v fb pin is used to provide output voltage regulation by using a resistor divider. the v fb voltage will be 0.800v typical with the output voltage in regulation. 3.4 enable pin (en) the en pin is a logic-level input used to enable or disable device switching and to lower the quiescent current while disabled. a logic high (> 1.4v) will enable the regulator output. a logic low (< 0.4v) will ensure that the regulator is disabled. 3.5 power supply input voltage pin (v in ) connect the input voltage source to v in . the input source should be decoupled to gnd with a 4.7 f-20 f capacitor, depending on the impedance of the source and output current. the input capacitor provides ac current for the power switch and a stable voltage source for the internal device power. this capacitor should be connected as close as possible to the v in and gnd pins. for lighter load applications, a 1 f x7r (or x5r, for limited temperature range, -40 to +85c) ceramic capacitor can be used. 3.6 switch pin (sw) the switch node pin is connected internally to the n-channel switch and externally to the sw node consisting of the inductor and schottky diode. the sw node can rise very fast as a result of the internal switch turning on. the external schottky diode should be connected close to the sw node and gnd. table 3-1: pin function table mcp16301/h sot-23 symbol description 1boost boost voltage that drives the internal nmos control switch. a bootstrap capacitor is connected between the boost and sw pins. 2 gnd ground pin. 3v fb output voltage feedback pin. connect v fb to an external resistor divider to set the output voltage. 4 en enable pin. logic high enables the operation. do not allow this pin to float. 5v in input supply voltage pin for power and internal biasing. 6 sw output switch node. this pin connects to the inductor, the freewheeling diode and the bootstrap capacitor. mcp16301/h ds20005004d-page 10 ? 2011-2015 microchip technology inc. notes: ? 2011-2015 microchip technology inc. ds20005004d-page 11 mcp16301/h 4.0 detailed description 4.1 device overview the mcp16301/h devices are high-input voltage step-down regulators, capable of supplying 600 ma to a regulated output voltage from 2.0v to 15v. internally, the trimmed 500 khz oscillator provides a fixed frequency, while the peak current mode control architecture varies the duty cycle for output voltage regulation. an internal floating driver is used to turn the high-side integrated n-channel mosfet on and off. the power for this driver is derived from an external boost capacitor whose energy is supplied from a fixed voltage ranging from 3.0v to 5.5v, typically the input or output voltage of the converter. for applications with an output voltage outside of this range, such as 12v, the boost capacitor bias can be derived from the output using a simple zener diode regulator. 4.1.1 internal reference voltage (v ref ) an integrated precise 0.8v reference combined with an external resistor divider sets the desired converter output voltage. the resistor divider range can vary without affecting the control system gain. high-value resistors consume less current, but are more susceptible to noise. 4.1.2 internal compensation all control system components necessary for stable operation over the entire device operating range are integrated, including the error amplifier and inductor current slope compensation. to add the proper amount of slope compensation, the inductor value changes along with the output voltage (see ta b l e 5 - 1 ). 4.1.3 external components external components consist of: ? input capacitor ? output filter (inductor and capacitor) ? freewheeling diode ? boost capacitor ? boost blocking diode ? resistor divider. the selection of the external inductor, output capacitor, input capacitor and freewheeling diode is dependent upon the output voltage and the maximum output current. 4.1.4 enable input enable input, (en), is used to enable and disable the device. if disabled, the mcp16301/h devices consume a minimal current from the input. once enabled, the internal soft start controls the output voltage rate of rise, preventing high-inrush current and output voltage overshoot. 4.1.5 soft start the internal reference voltage rate of rise is controlled during start-up, minimizing the output voltage over- shoot and the inrush current. 4.1.6 undervoltage lockout an integrated undervoltage lockout (uvlo) prevents the converter from starting until the input voltage is high enough for normal operation. the converter will typically start at 3.5v and operate down to 3.0v. hysteresis is added to prevent starting and stopping during start-up, as a result of loading the input voltage source. 4.1.7 overtemperature protection overtemperature protection limits the silicon die temperature to +150c by turning the converter off. the normal switching resumes at +120c. mcp16301/h ds20005004d-page 12 ? 2011-2015 microchip technology inc. figure 4-1: mcp16301/h block diagram. 4.2 functional description 4.2.1 step-down or buck converter the mcp16301/h devices are non-synchronous step-down or buck converters, capable of stepping input voltages ranging from 4v to 30v (mcp16301) or 36v (mcp16301h) down to 2.0v to 15v for v in >v out . the integrated high-side switch is used to chop or modulate the input voltage using a controlled duty cycle for output voltage regulation. high efficiency is achieved by using a low-resistance switch, low forward drop diode, low equivalent series resistance (esr), an inductor and a capacitor. when the switch is turned on, a dc voltage is applied to the inductor (v in ?v out ), resulting in a positive linear ramp of inductor current. when the switch turns off, the applied inductor voltage is equal to -v out , resulting in a negative linear ramp of inductor current (ignoring the forward drop of the schottky diode). for steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. while operating in steady state, the switch duty cycle must be equal to the relationship of v out /v in for constant output voltage regulation, under the condition that the inductor current is continuous or never reaches zero. for discontinuous inductor current operation, the steady-state duty cycle will be less than v out /v in to maintain voltage regulation. the average of the chopped input voltage or sw node voltage is equal to the output voltage, while the average of the inductor current is equal to the output current. figure 4-2: step-down converter. schottky diode c out c boost slope comp pwm latch + - overtemp precharge r comp amp + - c comp r comp hs drive cs v reg bg ref ss v ref otemp boost pre- charge 500 khz osc s v out v out r sense gnd boost diode v in en r top r bot boost sw gnd fb v ref shdn all blocks + - c in + + schottky diode c out v out sw v in + - sw on off on on off i l i l l i out v out v in 0 sw on off on on off i l i out v in 0 continuous inductor current mode discontinuous inductor current mode ? 2011-2015 microchip technology inc. ds20005004d-page 13 mcp16301/h 4.2.2 peak current mode control the mcp16301/h devices integrate a peak current mode control architecture, resulting in superior ac regulation while minimizing the number of voltage loop compensation components, and their size, for integration. peak current mode control takes a small portion of the inductor current, replicates it, and compares this replicated current sense signal to the output of the integrated error voltage. in practice, the inductor current and the internal switch current are equal during the switch-on time. by adding this peak current sense to the system control, the step-down power train system is reduced from a 2 nd order to a 1 st order. this reduces the system complexity and increases its dynamic performance. for pulse-width modulation (pwm) duty cycles that exceed 50%, the control system can become bimodal where a wide pulse followed by a short pulse repeats instead of the desired fixed pulse width. to prevent this mode of operation, an internal compensating ramp is summed into the current shown in figure 4-1 . 4.2.3 pulse-width modulation (pwm) the internal oscillator periodically starts the switching period, which, for mcp16301, occurs every 2 s or 500 khz. with the integrated switch turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. the error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output lc filter. if the regulated output voltage is lower than its target, the inverting error amplifier output rises. this results in an increase in the inductor current to correct the errors in the output voltage. the fixed-frequency duty cycle is terminated when the sensed inductor peak current, summed with the internal slope compensation, exceeds the output voltage of the error amplifier. the pwm latch is reset by turning off the internal switch and preventing it from turning on until the beginning of the next cycle. an overtemperature signal, or boost cap undervoltage, can also reset the pwm latch to asynchronously terminate the cycle. 4.2.4 high-side drive the mcp16301/h devices feature an integrated high-side n-channel mosfet for high-efficiency step-down power conversion. an n-channel mosfet is used for its low resistance and size (instead of a p-channel mosfet). the n-channel mosfet gate must be driven above its source to fully turn on the transistor. a gate-drive voltage above the input is necessary to turn on the high-side n-channel. the high-side drive voltage should be between 3.0v and 5.5v. the n-channel source is connected to the inductor and schottky diode, or switch node. when the switch is off, the inductor current flows through the schottky diode, providing a path to recharge the boost cap from the boost voltage source: typically the output voltage for 3.0v to 5.0v output applications. a boost-blocking diode is used to prevent current flow from the boost cap back into the output during the internal switch-on time. prior to start-up, the boost cap has no stored charge to drive the switch. an internal regulator is used to precharge the boost cap. once precharged, the switch is turned on and the inductor current flows. when the switch turns off, the inductor current free-wheels through the schottky diode, providing a path to recharge the boost cap. worst-case conditions for recharge occur when the switch turns on for a very short duty cycle at light load, limiting the inductor current ramp. in this case, there is a small amount of time for the boost capacitor to recharge. for high input voltages there is enough pre- charge current to replace the boost cap charge. for input voltages above 5.5v typical, the mcp16301/h devices will regulate the output voltage with no load. after starting, the mcp16301/h devices will regulate the output voltage until the input voltage decreases below 4v. see figure 2-17 for device range of opera- tion over input voltage, output voltage and load. 4.2.5 alternative boost bias for 3.0v to 5.0v output voltage applications, the boost supply is typically the output voltage. for applications with 3.0v < v out < 5.0v, an alternative boost supply can be used. alternative boost supplies can be from the input, input derived, output derived or an auxiliary system voltage. for low voltage output applications with unregulated input voltage, a shunt regulator derived from the input can be used to derive the boost supply. for applications with high output voltage or regulated high input voltage, a series regulator can be used to derive the boost supply. mcp16301/h ds20005004d-page 14 ? 2011-2015 microchip technology inc. figure 4-3: shunt and external boost supply. shunt boost supply regulation is used for low-output voltage converters operating from a wide ranging input source. a regulated 3.0v to 5.5v supply is needed to provide high-side drive bias. the shunt uses a zener diode to clamp the voltage within the 3.0v to 5.5v range using the resistance shown in figure 4-3 . to calculate the shunt resistance, the boost drive current can be estimated using equation 4-1 . i boost_typ for 3.3v boost supply = 0.6 ma i boost_typ for 5.0v boost supply = 0.8 ma equation 4-1: boost current c b v out v in c in c out sw en fb l r top v in fw diode 2v 12v v z =5.1v c1 r sh c b v out v in c in c out sw boost gnd en fb l r top r bot v in boost diode fw diode 2v 12v 3.0v to 5.5v external supply r bot mcp16301/h mcp16301/h boost diode boost gnd i boost i boost_typ 1.5 ? ma = ? 2011-2015 microchip technology inc. ds20005004d-page 15 mcp16301/h to calculate the shunt resistance, the maximum i boost and i z currents are used at the minimum input voltage ( equation 4-2 ). equation 4-2: shunt resistance v z and i z can be found on the zener diode manufacturer?s data sheet (typical i z =1ma). figure 4-4: series regulator boost supply. series regulator applications use a zener diode to drop the excess voltage. the series regulator bias source can be input or output voltage derived, as shown in figure 4-4 . for proper circuit operation, the boost supply must remain between 3.0v and 5.5v at all times. r sh v inmin v z ? i boost i z + ----------------------------- - = c b v out v in c in c out sw boost gnd en fb l r top r bot v in boost diode fw diode 12v 15v to 36v c b v in c in sw boost gnd en fb l v in boost diode fw diode 2v 12v v z =7.5v v z =7.5v v out r top r bot c out mcp16301/h mcp16301/h mcp16301/h ds20005004d-page 16 ? 2011-2015 microchip technology inc. notes: ? 2011-2015 microchip technology inc. ds20005004d-page 17 mcp16301/h 5.0 application information 5.1 typical applications the mcp16301/h step-down converters operate over a wide input voltage range, up to 36v maximum. typical applications include generating a bias or v dd voltage for the pic ? microcontroller product line, digital control system bias supply for ac-dc converters, 24v industrial input and similar applications. 5.2 adjustable output voltage calculations to calculate the resistor divider values for the mcp16301/h devices, equation 5-1 can be used. r top is connected to v out , r bot is connected to gnd and both are connected to the v fb input pin. equation 5-1: example 5-1: example 5-2: the transconductance error amplifier gain is controlled by its internal impedance. the external divider resistors have no effect on system gain, so a wide range of values can be used. a 10 k ? resistor is recommended as a good trade-off for quiescent current and noise immunity. 5.3 general design equations the step-down converter duty cycle can be estimated using equation 5-2 while operating in continuous inductor current mode. this equation also counts the forward drop of the freewheeling diode and internal n-channel mosfet switch voltage drop. as the load current increases, the switch voltage drop and diode voltage drop increase, requiring a larger pwm duty cycle to maintain the output voltage regulation. switch voltage drop is estimated by multiplying the switch current times the switch resistance or r dson . equation 5-2: continuous inductor current duty cycle the mcp16301/h devices feature an integrated slope compensation to prevent the bimodal operation of the pwm duty cycle. internally, half of the inductor current down slope is summed with the internal current sense signal. for the proper amount of slope compensation, it is recommended to keep the inductor down-slope current constant by varying the inductance with v out , where k = 0.22v/h. equation 5-3: for v out = 3.3v, an inductance of 15 h is recommended. r top r bot v out v fb ------------ -1 ? ?? ?? ? = v out =3.3v v fb =0.8v r bot =10k ? r top = 31.25 k ? (standard value = 31.6 k ? ) v out = 3.328v (using standard value) v out =5.0v v fb =0.8v r bot =10k ? r top = 52.5 k ? (standard value = 52.3 k ? ) v out = 4.98v (using standard value) table 5-1: recommended inductor values v out kl standard 2.0v 0.20 10 h 3.3v 0.22 15 h 5.0v 0.23 22 h 12v 0.21 56 h 15v 0.22 68 h d v out v diode + ?? v in i sw r dson ? ?? ? ?? ------------------------------------------------------- = kv out l ? = mcp16301/h ds20005004d-page 18 ? 2011-2015 microchip technology inc. 5.4 input capacitor selection the step-down converter input capacitor must filter the high input ripple current as a result of pulsing or chopping the input voltage. the input voltage pin of the mcp16301/h devices is used to supply voltage for the power train and as a source for internal bias. a low equivalent series resistance (esr), preferably a ceramic capacitor, is recommended. the necessary capacitance is dependent upon the maximum load current and source impedance. three capacitor parameters to keep in mind are the voltage rating, equivalent series resistance and the temperature rating. for wide temperature range applications, a multi-layer x7r dielectric is mandatory, while for applications with limited temperature range, a multi-layer x5r dielectric is acceptable. typically, input capacitance between 4.7 f and 10 f is sufficient for most applications. for applications with 100 ma to 200 ma load, a 1 f x7r capacitor can be used, depending on the input source and its impedance. the input capacitor voltage rating should be a minimum of v in plus margin. tab l e 5 - 2 contains the recommended range for the input capacitor value. 5.5 output capacitor selection the output capacitor helps in providing a stable output voltage during sudden load transients, and reduces the output voltage ripple. as with the input capacitor, x5r and x7r ceramic capacitors are well suited for this application. the mcp16301/h devices are internally compensated, so the output capacitance range is limited. see table 5-2 for the recommended output capacitor range. the amount and type of output capacitance and equivalent series resistance will have a significant effect on the output ripple voltage and system stability. the range of the output capacitance is limited due to the integrated compensation of the mcp16301/h devices. the output voltage capacitor voltage rating should be a minimum of v out , plus margin. table 5-2 contains the recommended range for the input and output capacitor value: 5.6 inductor selection the mcp16301/h devices are designed to be used with small surface mount inductors. several specifications should be considered prior to selecting an inductor. to optimize system performance, the inductance value is determined by the output voltage ( table 5-1 ) so the inductor ripple current is somewhat constant over the output voltage range. equation 5-4: inductor ripple current example 5-3: equation 5-5: inductor peak current an inductor saturation rating minimum of 760 ma is recommended. low esr inductors result in higher system efficiency. a trade-off between size, cost and efficiency is made to achieve the desired results. table 5-2: capacitor value range parameter min max c in 2.2 f none c out 20 f none ? i l v l l ----- -t on ? = v in =12v v out =3.3v i out =600ma i lpk ? i l 2 -------- i out + = inductor ripple current = 319 ma inductor peak current = 760 ma ? 2011-2015 microchip technology inc. ds20005004d-page 19 mcp16301/h 5.7 freewheeling diode the freewheeling diode creates a path for inductor current flow after the internal switch is turned off. the average diode current is dependent upon output load current at duty cycle (d). the efficiency of the converter is a function of the forward drop and speed of the freewheeling diode. a low forward drop schottky diode is recommended. the current rating and voltage rating of the diode is application dependent. the diode voltage rating should be a minimum of v in , plus margin. for example, a diode rating of 40v should be used for an application with a maximum input of 30v. the average diode current can be calculated using equation 5-6 . equation 5-6: diode average current example 5-4: a 0.5a to 1a diode is recommended. 5.8 boost diode the boost diode is used to provide a charging path from the low-voltage gate drive source, while the switch node is low. the boost diode blocks the high voltage of the switch node from feeding back into the output voltage when the switch is turned on, forcing the switch node high. a standard 1n4148 ultra-fast diode is recommended for its recovery speed, high voltage blocking capability, availability and cost. the voltage rating required for the boost diode is v in . for low boost voltage applications, a small schottky diode with the appropriately rated voltage can be used to lower the forward drop, increasing the boost supply for gate drive. table 5-3: mcp16301/h recommended 3.3v inductors part number value (h) dcr ( ? ) i sat (a) size wxlxh (mm) coilcraft ? me3220 15 0.52 0.90 3.2x2.5x2.0 lps4414 15 0.440 0.92 4.3x4.3x1.4 lps6235 15 0.125 2.00 6.0x6.0x3.5 mss6132 15 0.135 1.56 6.1x6.1x3.2 mss7341 15 0.057 1.78 7.3x7.3x4.1 me3220 15 0.520 0.8 2.8x3.2x2.0 lps3015 15 0.700 0.61 3.0x3.0x1.4 wrth elektronik group ? 744025 15 0.400 0.900 2.8x2.8x2.8 744031 15 0.255 0.450 3.8x3.8x1.65 744042 15 0.175 0.75 4.8x4.8x1.8 coiltronics ? sd12 15 0.48 0.692 5.2x5.2x1.2 sd18 15 0.266 0.831 5.2x5.2x1.8 sd20 15 0.193 0.718 5.2x5.2x2.0 sd3118 15 0.51 0.75 3.2x3.2x1.8 sd52 15 0.189 0.88 5.2x5.5.2.0 sumida ? corporation cdph4d19f 15 0.075 0.66 5.2x5.2x2.0 cdrh3d161h 15 0.328 0.65 4.0x4.0x1.8 tdk-epc ? vlf30251 15 0.5 0.47 2.5x3.0x1.2 vlf4012a 15 0.46 0.63 3.5x3.7x1.2 vlf5014a 15 0.28 0.97 4.5x4.7x1.4 b82462g4332m 15 0.097 1.05 6x6x2.2 table 5-4: freewheeling diodes app manufacturer part number rating 12 v in 600 ma diodes incorporated ? dfls120l-7 20v, 1a 24 v in 100 ma diodes incorporated b0540ws-7 40v, 0.5a 18 v in 600 ma diodes incorporated b130l-13-f 30v, 1a i d1avg 1d ? ?? i out ? = i out =0.5a v in =15v v out =5v d=5/15 i d1avg =333ma mcp16301/h ds20005004d-page 20 ? 2011-2015 microchip technology inc. 5.9 boost capacitor the boost capacitor is used to supply current for the internal high-side drive circuitry that is above the input voltage. the boost capacitor must store enough energy to completely drive the high-side switch on and off. a 0.1 f x5r or x7r capacitor is recommended for all applications. the boost capacitor maximum voltage is 5.5v, so a 6.3v or 10v rated capacitor is recommended. in case of a noise-sensitive application, an additional resistor in series with the boost capacitor, that will reduce the high-frequency noise associated with switching power supplies, can be added. a typical value for the resistor is 82 ? . 5.10 thermal calculations the mcp16301/h devices are available in a sot-23-6 package. by calculating the power dissipation and applying the package thermal resistance ( ? ja ), the junction temperature is estimated. the maximum continuous junction temperature rating for the mcp16301/h devices is +125c. to quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. given the measured efficiency, the internal power dissipation is estimated by equation 5-7 . this power dissipation includes all internal and external component losses. for a quick internal estimate, subtract the estimated schottky diode loss and inductor esr loss from the p dis calculation in equation 5-7 . equation 5-7: total power dissipation estimate the difference between the first term, input power, and the second term, power delivered, is the total system power dissipation. the freewheeling schottky diode losses are determined by calculating the average diode current and multiplying by the diode forward drop. the inductor losses are estimated by p l =i out 2 xl esr . equation 5-8: diode power dissipation estimate example 5-5: 5.11 pcb layout information good printed circuit board layout techniques are important to any switching circuitry, and switching power supplies are no different. when wiring the switching high-current paths, short and wide traces should be used. therefore, it is important that the input and output capacitors be placed as close as possible to the mcp16301/h devices to minimize the loop area. the feedback resistors and feedback signal should be routed away from the switching node and the switching current loop. when possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference. a good mcp16301/h layout starts with c in placement. c in supplies current to the input of the circuit when the switch is turned on. in addition to supplying high-frequency switch current, c in also provides a stable voltage source for the internal mcp16301/h circuitry. unstable pwm operation can result if there are excessive transients or ringing on the v in pin of the mcp16301/h devices. in figure 5-1 , c in is placed close to pin 5. a ground plane on the bottom of the board provides a low resistive and inductive path for the return current. the next priority in placement is the freewheeling current loop formed by d1, c out and l, while strategically placing c out return close to c in return. next, c b and d b should be placed between the boost pin and the switch node pin sw. this leaves space close to the v fb pin of the mcp16301/h devices to place r top and r bot . r top and r bot are routed away from the switch node so noise is not coupled into the high-impedance v fb input. v out i out ? efficiency ------------------------------ - ?? ?? v out i out ? ?? ? p dis = p diode v f 1d ? ?? i out ? ?? ? = v in =10v v out =5v i out =0.4a efficiency = 90% total system dissipation = 222 mw l esr =0.15 ? p l =24mw diode vf = 0.50 d=50% p diode =125mw mcp16301/h internal power dissipation estimate: p dis -p l -p diode =73mw ? ja =198c/w estimated junction temperature rise =+14.5c ? 2011-2015 microchip technology inc. ds20005004d-page 21 mcp16301/h figure 5-1: mcp16301/h sot-23-6 recommended layout, 600 ma design. bottom plane is gnd r bot r top 10 ohm v out v in 2xc in r en en c b d b 1 gnd gnd l d1 c out c out bottom trace mcp16301/h c b v in c out sw boost gnd en fb l db d1 3.3v 4v to 30v 10 ohm r en v out r top r bot 1 6 3 2 5 4 v in c in mcp16301/h component value c in 10 f c out 2x10f l15h r top 31.6 k ? r bot 10 k ? d1 b140 d b 1n4148 c b 100 nf *note: the 10 ? resistor is used with network analyzer, to measure system gain and phase. mcp16301/h ds20005004d-page 22 ? 2011-2015 microchip technology inc. figure 5-2: mcp16301/h sot-23-6 d 2 recommended layout, 200 ma design. gnd bottom plane is gnd r en c out v in gnd v out gnd l d b r top r bot c b d1 c in mcp16301/h c b v out v in c out sw boost gnd en fb l r top v in d b d1 3.3v 4v to 30v r en component value c in 1f c out 10 f l15h r top 31.6 k ? r bot 10 k ? d1 pd3s130 c b 100 nf r en 1m ? mcp16301/h 1 6 3 2 5 4 r bot c in ? 2011-2015 microchip technology inc. ds20005004d-page 23 mcp16301/h 6.0 typical application circuits figure 6-1: typical application 30v v in to 3.3v v out . component value manufacturer part number comment c in 2 x 4.7 f taiyo yuden ? co., ltd. umk325b7475km-t cap. 4.7 f 50v ceramic x7r 1210 10% c out 2 x 10 f taiyo yuden co., ltd. jmk212b7106kg-t cap. 10 f 6.3v ceramic x7r 0805 10% l 15 h coilcraft ? mss6132-153ml mss6132 15 h shielded power inductor r top 31.6 k ? panasonic ? -ecg erj-3ekf3162v res. 31.6 k ? 1/10w 1% 0603 smd r bot 10 k ? panasonic-ecg erj-3ekf1002v res. 10.0 k ? 1/10w 1% 0603 smd fw diode b140 diodes incorporated ? b140-13-f diode schottky 40v 1a sma boost diode 1n4148 diodes incorporated 1n4448ws-7-f diode switch 75v 200 mw sod-323 c b 100 nf avx ? corporation 0603yc104kat2a cap. 0.1 f 16v ceramic x7r 0603 10% c b v out v in c in c out sw boost gnd en fb l v in boost diode fw diode 3.3v 6v to 30v r top r bot mcp16301/h mcp16301/h ds20005004d-page 24 ? 2011-2015 microchip technology inc. figure 6-2: typical application 15v ? 30v input; 12v output. c b sw boost gnd en fb l boost diode fw diode 12v 15v to 30v d z component value manufacturer part number comment c in 2x4.7f taiyo yuden ? co., ltd. umk325b7475km-t cap. 4.7 uf 50v ceramic x7r 1210 10% c out 2 x 10 f taiyo yuden co., ltd. jmk212b7106kg-t cap. ceramic 10 f 25v x7r 10% 1206 l 56 h coilcraft ? mss6132-153ml mss7341 56 h shielded power inductor r top 140 k ? panasonic ? -ecg erj-3ekf3162v res. 140 k ? 1/10w 1% 0603 smd r bot 10 k ? panasonic-ecg erj-3ekf1002v res. 10.0 k ? 1/10w 1% 0603 smd fw diode b140 diodes incorporated ? b140-13-f diode schottky 40v 1a sma boost diode 1n4148 diodes incorporated 1n4448ws-7-f diode switch 75v 200 mw sod-323 c b 100 nf avx ? corporation 0603yc104kat2a cap. 0.1 f 16v ceramic x7r 0603 10% d z 7.5v zener diodes incorporated mmsz5236bs-7-f diode zener 7.5v 200 mw sod-323 mcp16301/h v out v in c out r top r bot v in c in ? 2011-2015 microchip technology inc. ds20005004d-page 25 mcp16301/h figure 6-3: typical application 12v input; 2v output at 600 ma. c b sw boost gnd en fb l v in boost diode fw diode 2v 12v d z r top v out c out c in v in r bot component value manufacturer part number comment c in 10 f taiyo yuden ? co., ltd. emk316b7106kl-td cap. ceramic 10 f 16v x7r 10% 1206 c out 22 f taiyo yuden co., ltd. jmk316b7226ml-t cap. ceramic 22 f 6.3v x7r 1206 l 10 h coilcraft ? mss4020-103ml 10 h shielded power inductor r top 15 k ? panasonic ? -ecg erj-3ekf1502v res. 15.0 k ? 1/10w 1% 0603 smd r bot 10 k ? panasonic-ecg erj-3ekf1002v res. 10.0 k ? 1/10w 1% 0603 smd fw diode pd3s diodes incorporated ? pd3s120l-7 diode schottky 1a 20v powerdi323 boost diode 1n4148 diodes incorporated 1n4448ws-7-f diode switch 75v 200 mw sod-323 c b 100 nf avx ? corporation 0603yc104kat2a cap. 0.1 f 16v ceramic x7r 0603 10% d z 7.5v zener diodes incorporated mmsz5236bs-7-f diode zener 7.5v 200 mw sod-323 mcp16301/h mcp16301/h ds20005004d-page 26 ? 2011-2015 microchip technology inc. figure 6-4: typical application 10v to 16v v in to 2.5v v out . c b sw boost gnd en fb l boost diode fw diode 2.5v 10v to 16v d z c z mcp16301/h r bot r top v out r z v in c in v in c out component value manufacturer part number comment c in 10 f taiyo yuden ? co., ltd. tmk316b7106kl-td cap. ceramic 10 f 25v x7r 10% 1206 c out 22 f taiyo yuden co., ltd. jmk316b7226ml-t cap. ceramic 22 f 6.3v x7r 1206 l12hcoilcraft ? lps4414-123mlb lps4414 12 h shielded power inductor r top 21.5 k ? panasonic ? -ecg erj-3ekf2152v res. 21.5 k ? 1/10w 1% 0603 smd r bot 10 k ? panasonic-ecg erj-3ekf1002v res. 10.0 k ? 1/10w 1% 0603 smd fw diode dfls120 diodes incorporated ? dfls120l-7 diode schottky 20v 1a powerdi123 boost diode 1n4148 diodes incorporated 1n4448ws-7-f diode switch 75v 200 mw sod-323 c b 100 nf avx ? corporation 0603yc104kat2a cap. 0.1 f 16v ceramic x7r 0603 10% d z 7.5v zener diodes incorporated mmsz5236bs-7-f diode zener 7.5v 200 mw sod-323 c z 1 f taiyo yuden co., ltd. lmk107b7105ka-t cap. ceramic 1.0 f 10v x7r 0603 r z 1k ? panasonic-ecg erj-8enf1001v res. 1.00 k ? 1/4w 1% 1206 smd ? 2011-2015 microchip technology inc. ds20005004d-page 27 mcp16301/h figure 6-5: typical application 4v to 30v v in to 3.3v v out at 150 ma. c b sw boost gnd en fb l v in boost diode fw diode 3.3v 4v to 30v r en c in r top v out v in c out r bot mcp16301/h component value manufacturer part number comment c in 1 f taiyo yuden ? co., ltd. gmk212b7105kg-t cap. ceramic 1.0 f 35v x7r 0805 c out 10 f taiyo yuden co., ltd. jmk107bj106ma-t cap. ceramic 10 f 6.3v x5r 0603 l15hcoilcraft ? lps3015-153mlb inductor power 15 h 0.61a smd r top 31.6 k ? panasonic ? -ecg erj-2rkf3162x res. 31.6 k ? 1/10w 1% 0402 smd r bot 10 k ? panasonic-ecg erj-3ekf1002v res. 10.0 k ? 1/10w 1% 0603 smd fw diode b0540 diodes incorporated ? b0540ws-7 diode schottky 0.5a 40v sod323 boost diode 1n4148 diodes incorporated 1n4448ws-7-f diode switch 75v 200 mw sod-323 c b 100 nf tdk ? corporation c1005x5r0j104m cap. ceramic 0.10 f 6.3v x5r 0402 r en 10 m ? panasonic-ecg erj-2rkf1004x res. 1.00 m ? 1/10w 1% 0402 smd mcp16301/h ds20005004d-page 28 ? 2011-2015 microchip technology inc. notes: ? 2011-2015 microchip technology inc. ds20005004d-page 29 mcp16301/h 7.0 packaging information 7.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec ? designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 6-lead sot-23 example ht25 part number code mcp16301t-i/chy htnn mcp16301t-e/ch jynn mcp16301ht-e/ch aaany mcp16301ht-i/ch aaapy mcp16301/h ds20005004d-page 30 ? 2011-2015 microchip technology inc. b e 4 n e1 pin1idby laser mark d 1 2 3 e e1 a a1 a2 c l l1 ? 2011-2015 microchip technology inc. ds20005004d-page 31 mcp16301/h note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging mcp16301/h ds20005004d-page 32 ? 2011-2015 microchip technology inc. 6-lead plastic small outline transistor (chy) [sot-23] notes: 1. dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed 0.127 mm per side. 2. dimensioning and tolerancing per asme y14.5m. bsc: basic dimension. theoretically exact value shown without tolerances. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging units millimeters dimension limits min nom max number of pins n 6 pitch e 0.95 bsc outside lead pitch e1 1.90 bsc overall height a 0.90 C 1.45 molded package thickness a2 0.89 C 1.30 standoff a1 0.00 C 0.15 overall width e 2.20 C 3.20 molded package width e1 1.30 C 1.80 overall length d 2.70 C 3.10 foot length l 0.10 C 0.60 footprint l1 0.35 C 0.80 foot angle i 0 C 30 lead thickness c 0.08 C 0.26 lead width b 0.20 C 0.51 b e 4 n e1 pin1idby laser mark d 1 2 3 e e1 a a1 a2 c l l1 microchip technology drawing c04-028b ? 2011-2015 microchip technology inc. ds20005004d-page 33 mcp16301/h 6-lead plastic small outline transistor (chy) [sot-23] note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging mcp16301/h ds20005004d-page 34 ? 2011-2015 microchip technology inc. notes: ? 2011-2015 microchip technology inc. ds20005004d-page 35 mcp16301/h appendix a: revision history revision d (april 2015) the following is the list of modifications: 1. updated the features section. 2. updated the input voltage and resistor values in the typical applications section. 3. added figure 2-6 . 4. updated examples 5-1 and 5-2 . 5. updated the r top value in figures 5-1, 5-2 , 6-1 and 6-5 . revision c (november 2013) the following is the list of modifications: 1. added new device to the family (mcp16301h) and related information throughout the document. 2. added package markings and drawings for the mcp16301h device. 3. updated the product identification system section. revision b (november 2012) the following is the list of modifications: 1. added extended temperature characteristic. 2. added 6-lead sot-23 package version (ch code). 3. updated the following characterization charts: figures 2-7 , 2-8 , 2-9 , 2-10 , 2-12 , 2-13 and 2- 14 . 4. updated section 7.0, packaging information . 5. updated the product identification system section. revision a (may 2011) ? original release of this document. mcp16301/h ds20005004d-page 36 ? 2011-2015 microchip technology inc. notes: ? 2011-2015 microchip technology inc. ds20005004d-page 37 mcp16301/h product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . examples: a) mcp16301t-i/chy: step-down regulator, tape and reel, industrial temperature, 6ld sot-23 package b) mcp16301t-e/ch: step-down regulator, tape and reel, extended temperature, 6ld sot-23 package c) mcp16301ht-e/ch: step-down regulator, tape and reel, extended temperature, 6ld sot-23 package part no. -x /xxx package temperature range device device: mcp16301t: high-voltage step-down regulator, tape and reel mcp16301ht: high-voltage step-down regulator, tape and reel temperature range: e= -40 ? c to +125 ? c (extended) i= -40 ? c to +85 ? c (industrial) package: ch = plastic small outline transistor (sot-23), 6-lead chy*= plastic small outline transistor (sot-23), 6-lead *y = nickel palladium gold manufacturing designator. x tape and reel mcp16301/h ds20005004d-page 38 ? 2011-2015 microchip technology inc. notes: ? 2011-2015 microchip technology inc. ds20005004d-page 39 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, flashflex, flexpwr, jukeblox, k ee l oq , k ee l oq logo, kleer, lancheck, medialb, most, most logo, mplab, optolyzer, pic, picstart, pic 32 logo, righttouch, spynic, sst, sst logo, superflash and uni/o are registered trademarks of microchip tec hnology incorporated in the u.s.a. and other countries. the embedded control solutions company and mtouch are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, ecan, in-circuit serial programming, icsp, inter-chip connectivity, kleernet, kleernet logo, miwi, mpasm, mpf, mplab certified logo, mplib, mplink, multitrak, netdetach, omniscient code generation, picdem, picdem.net, pickit, pictail, righttouch logo, real ice, sqi, serial quad i/o, total endurance, tsharc, usbcheck, varisense, viewspan, wiperlock, wireless dna, and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. gestic is a registered trademar ks of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2011-2015, microchip technology incorporated, printed in the u.s.a., all rights reserved. isbn: 978-1-63277-328-9 note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip produc ts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == ds20005004d-page 40 ? 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